{"version":"1.0","type":"link","title":"Dry etching - Newikis","description":"Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium…","provider_name":"Newikis","provider_url":"https://newikis.com","cache_age":86400}