MEMS sensor generations

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MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows:

1st Generation: MEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip.

2nd Generation: MEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip.

3rd Generation: Fusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip.

4th Generation: Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.

References

↑ Terry, S.C.; Jerman, J.H.; Angell, J.B. (December 1979). "A gas chromatographic air analyzer fabricated on a silicon wafer". IEEE Transactions on Electron Devices. 26 (12): 1880–1886. doi:10.1109/T-ED.1979.19791.